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- W3039084015 abstract "We present here a detailed comparison of HCI induced drift of logic devices parameters from 40nm SiON and 28nm HKMG nodes. Repeated HCI stress with sampling ranging from 70 to 200 allow a comparison of Vth drift Idlin drift variability through various HCI Stress configurations." @default.
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- W3039084015 date "2020-04-01" @default.
- W3039084015 modified "2023-09-23" @default.
- W3039084015 title "Comparison of variability of HCI induced drift for SiON and HKMG devices" @default.
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- W3039084015 doi "https://doi.org/10.1109/irps45951.2020.9128326" @default.
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