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• W3039674310 abstract "This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of 115 Ω/sq. A novel edge termination based on regrown p-GaN is proposed to manage the electric field crowding in the Schottky contact region. A new self-aligned Ohmic process is developed to form sidewall contact to all five channels in a single lithography step. The fabricated lateral SBDs with a breakdown voltage (BV) of 1.65, 2.55, and 3.35 kV show a Baliga's figure of merit of 3.1, 3.5, and 3.6 GW/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , respectively, which are the highest among all the similarly-rated power SBDs to date. Based on experimental results, the practical limits of multi-channel AlGaN/GaN lateral devices were found to reach the theoretical vertical GaN limit at a BV over ±2 kV. This suggests the great promise of multi-channel AlGaN/GaN lateral devices for medium- and high-voltage power applications." @default.
• W3039674310 created "2020-07-10" @default.
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• W3039674310 date "2020-08-01" @default.
• W3039674310 modified "2023-10-13" @default.
• W3039674310 title "3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination" @default.
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• W3039674310 doi "https://doi.org/10.1109/led.2020.3005934" @default.
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