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- W3039905629 abstract "An O-N-O layer within a DRAM is designed to be an insulator between a single-crystal silicon substrate and a poly-crystalline silicon gate. The nominal structure of the layer is SiO 2 -Si 3 N 4 -SiO 2 . A small amount of phosphorus is doped in the poly-crystalline silicon gate to improve the electrical characteristics of the device. Transmission Electron Microscopy (TEM) was first used to view the micro structure in the layer. A bright field image gave clear contrast in the O-N-O layer, however, TEM images do not provide direct information about the elemental distribution. In this study X-ray elemental mapping was thus used to show this distribution. The specimen was cut from a 16M-DRAM device and thinned using the cross-section ion milling method. The O-N-O layer was examined using a JEM-201 OF FE-(S)TEM equipped with a JEOL UTW-EDS detector. Fig. 1 shows a high resolution TEM image of the O-N-O layer." @default.
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- W3039905629 date "1998-07-01" @default.
- W3039905629 modified "2023-09-26" @default.
- W3039905629 title "Compositional Characterization of an O-N-O Layer in a Dram Using FE-TEM and EDS Elemental Mapping" @default.
- W3039905629 doi "https://doi.org/10.1017/s1431927600020857" @default.
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