FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3039928576> ?p ?o ?g. }

• W3039928576 endingPage "123018" @default.
• W3039928576 startingPage "123013" @default.
• W3039928576 abstract "The effect of ultraviolet/Ozone (UV/O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> )-assisted annealing process on the structural, chemical, and electrical properties of sol-gel-processed SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films is investigated in this study. Via the UV/O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -assisted annealing processes, mixed-phase SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films composed of amorphous SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and polycrystalline SnO were obtained. Furthermore, the XPS spectra indicate an increase in the SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /SnO ratio and a substantial decrease in the number of -OH groups (serving as trap sites). This results in an increase in the conductivity and field-effect mobility of the films. The field-effect mobility of the UV/Ozone-assisted 300 °C-annealed SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> thin film transistor (TFT) increases considerably (by ~500×), yielding a device with a field-effect mobility of 3.09 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs. In addition, flexible SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> TFTs with Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> insulator and Au gate on Polyimide substrate fabricated via gate electrode engineering shows a decreased conduction bandgap offset, compared to the SnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> TFTs on SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , and enhancement mode operation properties (normally off at zero gate voltage) with a field-effect mobility of 1.87 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs." @default.
• W3039928576 created "2020-07-10" @default.
• W3039928576 creator A5009572787 @default.
• W3039928576 creator A5027485316 @default.
• W3039928576 creator A5039527129 @default.
• W3039928576 creator A5046686883 @default.
• W3039928576 creator A5076101798 @default.
• W3039928576 creator A5079538880 @default.
• W3039928576 creator A5080721285 @default.
• W3039928576 creator A5086311475 @default.
• W3039928576 date "2020-01-01" @default.
• W3039928576 modified "2023-10-10" @default.
• W3039928576 title "Enhancement Mode Flexible SnO₂Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach" @default.
• W3039928576 cites W1599051720 @default.
• W3039928576 cites W1628269443 @default.
• W3039928576 cites W1898719868 @default.
• W3039928576 cites W1934393473 @default.
• W3039928576 cites W1980099270 @default.
• W3039928576 cites W1997661214 @default.
• W3039928576 cites W1999223906 @default.
• W3039928576 cites W1999589524 @default.
• W3039928576 cites W2018540978 @default.
• W3039928576 cites W2026014585 @default.
• W3039928576 cites W2041575842 @default.
• W3039928576 cites W2046870563 @default.
• W3039928576 cites W2065624918 @default.
• W3039928576 cites W2082961046 @default.
• W3039928576 cites W2088414510 @default.
• W3039928576 cites W2114776920 @default.
• W3039928576 cites W2125444603 @default.
• W3039928576 cites W2318882878 @default.
• W3039928576 cites W2334076175 @default.
• W3039928576 cites W2515162030 @default.
• W3039928576 cites W2588282977 @default.
• W3039928576 cites W2806858464 @default.
• W3039928576 cites W2809097295 @default.
• W3039928576 cites W2937702140 @default.
• W3039928576 cites W2943904783 @default.
• W3039928576 cites W2948830274 @default.
• W3039928576 cites W2965543870 @default.
• W3039928576 cites W4249979563 @default.
• W3039928576 doi "https://doi.org/10.1109/access.2020.3007372" @default.
• W3039928576 hasPublicationYear "2020" @default.
• W3039928576 type Work @default.
• W3039928576 sameAs 3039928576 @default.
• W3039928576 citedByCount "7" @default.
• W3039928576 countsByYear W30399285762021 @default.
• W3039928576 countsByYear W30399285762022 @default.
• W3039928576 countsByYear W30399285762023 @default.
• W3039928576 crossrefType "journal-article" @default.
• W3039928576 hasAuthorship W3039928576A5009572787 @default.
• W3039928576 hasAuthorship W3039928576A5027485316 @default.
• W3039928576 hasAuthorship W3039928576A5039527129 @default.
• W3039928576 hasAuthorship W3039928576A5046686883 @default.
• W3039928576 hasAuthorship W3039928576A5076101798 @default.
• W3039928576 hasAuthorship W3039928576A5079538880 @default.
• W3039928576 hasAuthorship W3039928576A5080721285 @default.
• W3039928576 hasAuthorship W3039928576A5086311475 @default.
• W3039928576 hasBestOaLocation W30399285761 @default.
• W3039928576 hasConcept C113196181 @default.
• W3039928576 hasConcept C159985019 @default.
• W3039928576 hasConcept C178790620 @default.
• W3039928576 hasConcept C185592680 @default.
• W3039928576 hasConcept C192562407 @default.
• W3039928576 hasConcept C2776798109 @default.
• W3039928576 hasConcept C2777855556 @default.
• W3039928576 hasConcept C49040817 @default.
• W3039928576 hasConcept C56052488 @default.
• W3039928576 hasConceptScore W3039928576C113196181 @default.
• W3039928576 hasConceptScore W3039928576C159985019 @default.
• W3039928576 hasConceptScore W3039928576C178790620 @default.
• W3039928576 hasConceptScore W3039928576C185592680 @default.
• W3039928576 hasConceptScore W3039928576C192562407 @default.
• W3039928576 hasConceptScore W3039928576C2776798109 @default.
• W3039928576 hasConceptScore W3039928576C2777855556 @default.
• W3039928576 hasConceptScore W3039928576C49040817 @default.
• W3039928576 hasConceptScore W3039928576C56052488 @default.
• W3039928576 hasFunder F4320322030 @default.
• W3039928576 hasFunder F4320322120 @default.
• W3039928576 hasFunder F4320326308 @default.
• W3039928576 hasLocation W30399285761 @default.
• W3039928576 hasOpenAccess W3039928576 @default.
• W3039928576 hasPrimaryLocation W30399285761 @default.
• W3039928576 hasRelatedWork W2018879842 @default.
• W3039928576 hasRelatedWork W2737498735 @default.
• W3039928576 hasRelatedWork W2744391499 @default.
• W3039928576 hasRelatedWork W2898370298 @default.
• W3039928576 hasRelatedWork W2899084033 @default.
• W3039928576 hasRelatedWork W3041790586 @default.
• W3039928576 hasRelatedWork W3120461830 @default.
• W3039928576 hasRelatedWork W3144504424 @default.
• W3039928576 hasRelatedWork W4230250635 @default.
• W3039928576 hasRelatedWork W4292492973 @default.
• W3039928576 hasVolume "8" @default.
• W3039928576 isParatext "false" @default.
• W3039928576 isRetracted "false" @default.
• W3039928576 magId "3039928576" @default.
• W3039928576 workType "article" @default.