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- W3041893431 abstract "A method of measuring the surface strain of thin films using low energy electron diffraction (LEED) is described with examples. A novel LEED system employing position-sensitive detection to make digital records of LEED patterns was used. A 500 Å thick Ge film grown by MBE on a Si(111)-7×7 substrate showed a c(2×8) LEED pattern and was found to be unstrained within error (±0.2%). A GexSi1-x (x=0.53) film prepared by sputtering and annealing the Ge film showed a 5×5 pattern and was found to be pseudomorphic (±0.2%). The significance of the measurement is discussed with reference to theoretical ideas linking lateral compressive stress and reconstruction of semiconductor (111) surfaces." @default.
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- W3041893431 date "1985-11-01" @default.
- W3041893431 modified "2023-09-26" @default.
- W3041893431 title "Surface strain in GexSi1-x films measured by LEED" @default.
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- W3041893431 doi "https://doi.org/10.1016/0167-2584(85)90872-2" @default.
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