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- W3042097627 abstract "The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited Ga2O3/ZnO composite film as the dielectric was investigated. By alternatively atomic-layer-depositing Ga2O3 and ZnO with different thickness, we can accurately control the oxygen vacancy concentration. When regulating ZnO to ∼31%, the RRAMs exhibit a forming-free property as well as outstanding performance, including the ratio of a high resistance state to the low resistance state of 1000, retention time of more than 1 × 104 s, and the endurance of 100. By preparing RRAMs of different Zn concentration, we carried out a comparative study and explored the physical origin for the forming-free property as well as good performance. Finally, a unified model is proposed to account for the resistive switching and the current conduction mechanism, providing meaningful insights in the development of high-quality and forming-free RRAMs for future memory and neuromorphic applications." @default.
- W3042097627 created "2020-07-16" @default.
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- W3042097627 date "2020-06-15" @default.
- W3042097627 modified "2023-10-14" @default.
- W3042097627 title "Atomic Layer Deposition of Ga<sub>2</sub>O<sub>3</sub>/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory" @default.
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- W3042097627 doi "https://doi.org/10.1021/acsami.0c06476" @default.
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