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- W3042269510 abstract "Abstract Non-volatile memory (NVM) will play a significant role in the progress of the next-generation of electronic products due to the physical limitations of the conventionally used flash memory. In this paper, switching properties of Cu/HfO2/Pt/Si resistive random access memory device were successfully demonstrated. Semiconductor parameter analyzer (model no. B1500A Agilent) was used for the measurement of the resistive switching characteristics of the fabricated device. It has been observed that the device shows the bipolar mode of switching operation. The temperature dependence of electrical conductivity for low resistance state and high resistance state was also measured in the range from 300 K to 450 K. The switching behaviour of the proposed device explained on the basis of conduction filaments formed in HfO2." @default.
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- W3042269510 date "2020-01-01" @default.
- W3042269510 modified "2023-10-17" @default.
- W3042269510 title "Resistive switching characteristics of HfO2 based bipolar nonvolatile RRAM cell" @default.
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- W3042269510 doi "https://doi.org/10.1016/j.matpr.2020.06.209" @default.
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