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- W3042308919 abstract "Generally, high temperature annealing treatment (>950 °C) is required to form Ni/SiC Ohmic contact. Some research believes that the specific contact resistance could be improved by the increase in sp2-carbon at the Ni/SiC interface. In this work, a magnetron sputtering deposited carbon layer has been inserted into Ni/SiC and annealed at 850 °C to verify the effect of sp2-carbon. The results indicate that the sp2-carbon ratio increases from 31% to 66%, and the specific contact resistance improves from 2.5 × 10−4 Ω cm2 to 5.0 × 10−5 Ω cm2 with the insertion of carbon. Furthermore, the intermediate semiconductor layer (ISL) model is used to analyze the impacting mechanism of sp2-carbon on Ohmic contact." @default.
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- W3042308919 date "2020-07-13" @default.
- W3042308919 modified "2023-10-16" @default.
- W3042308919 title "A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp<sup>2</sup>-carbon" @default.
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- W3042308919 doi "https://doi.org/10.1063/5.0009813" @default.
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