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- W3043284067 abstract "The purpose of this paper is to explore the failure mechanism of 650V state-of-the-art SiC double-trench MOSFETs under short-circuit (SC) test. The experimental results demonstrate drain voltage ( $V_{text{DS}}$ ) has a pronounced influence on the SC capability of the device, and different $V_{text{DS}}$ will lead to discrepant failure mechanisms. The gate-to-source oxide rupture is most likely to occur when a lower $V_{text{DS}}$ is imposed on the studied device. However, the breakdown of the gate-to-source and drain-to-source takes place simultaneously with a higher $V_{text{DS}}$ . And the reason will be discussed in this work." @default.
- W3043284067 created "2020-07-23" @default.
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- W3043284067 date "2020-06-01" @default.
- W3043284067 modified "2023-09-27" @default.
- W3043284067 title "Short-circuit Failure Mechanism of SiC Double-trench MOSFET" @default.
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- W3043284067 doi "https://doi.org/10.1109/itoec49072.2020.9141691" @default.
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