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- W3043295536 abstract "Abstract Cu2SnSe3 thin films were prepared by the two-stage process (metal layers deposited by direct current-sputtering + selenization of metal layers by rapid thermal annealing). The effect of selenization temperature (350 °C-550 °C) on the physical properties of Cu2SnSe3 was investigated thoroughly. The formation of single-phase Cu2SnSe3 was confirmed by the X-ray diffraction patterns of the selenized films at 550 °C. The Raman modes at 181 cm−1 and 231 cm−1 confirmed the formation of single-phase Cu2SnSe3 at 550 °C and the presence of secondary phase identification was also investigated. The compositional and morphological analysis was investigated using energy-dispersive X-ray spectrometer and field emission scanning electron microscopy measurements, respectively. The optical properties of selenized films were measured by the ultraviolet-visible spectroscopy and the calculated results showed the bandgap values in the range 0.9-1.44 eV. The Hall Effect measurement showed that the values of carrier concentration were decreased and the resistivity was increased with increasing of selenization temperature." @default.
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- W3043295536 date "2020-09-01" @default.
- W3043295536 modified "2023-09-23" @default.
- W3043295536 title "Effect of selenization temperature on the physical properties of Cu2SnSe3 thin films" @default.
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- W3043295536 doi "https://doi.org/10.1016/j.tsf.2020.138238" @default.
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