FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3043365920> ?p ?o ?g. }

• W3043365920 abstract "Abstract The rapid development of mobile and internet‐of‐thing devices demands continuous scaling of metal–insulator–semiconductor field‐effect transistors for high‐resolution and low‐power displays. However, such technology is limited by inadequate scaling of supply voltage and sophisticated dielectric engineering. Here, to enable continued scaling, indium–gallium–zinc‐oxide (InGaZnO) tunnel field‐effect transistor (TFET) and junction field‐effect transistor (JFET) are designed and fabricated based on vertically stacked black phosphorus (BP)/InGaZnO van der Waals heterojunctions. By varying BP thickness, BP/InGaZnO heterojunctions can be operated as forward rectifying diode, Zener diode, and backward rectifying diode, respectively. Room‐temperature negative‐differential‐resistance behavior with large peak‐to‐valley ratio of 2.1 and high tunneling current density of 160 mA mm −2 is obtained in thick‐BP/InGaZnO heterojunction. On this basis, sub‐thermionic subthreshold swing (SS) of 11 mV dec −1 is achieved in InGaZnO TFET. Meanwhile, the InGaZnO JFET based on thin‐BP/InGaZnO heterostructure exhibits good transistor performance of on/off ratio exceeding 10 5 , high field‐effect mobility of 23.5 cm 2 V s −1 , negligible hysteresis, and improved SS of 83 mV dec −1 . The BP/InGaZnO heterojunction is possibly the only device architecture so far to realize the amorphous metal‐oxide‐semiconductors TFET and JFET, thus providing promising pathways for further thin‐film transistor technology." @default.
• W3043365920 created "2020-07-23" @default.
• W3043365920 creator A5020365075 @default.
• W3043365920 creator A5025756253 @default.
• W3043365920 creator A5026293881 @default.
• W3043365920 creator A5034932708 @default.
• W3043365920 creator A5040641357 @default.
• W3043365920 creator A5046214153 @default.
• W3043365920 creator A5054462478 @default.
• W3043365920 creator A5075771135 @default.
• W3043365920 creator A5078416111 @default.
• W3043365920 date "2020-07-15" @default.
• W3043365920 modified "2023-10-17" @default.
• W3043365920 title "InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions" @default.
• W3043365920 cites W1860788729 @default.
• W3043365920 cites W1970044136 @default.
• W3043365920 cites W1991544272 @default.
• W3043365920 cites W1997219567 @default.
• W3043365920 cites W2024467587 @default.
• W3043365920 cites W2032197740 @default.
• W3043365920 cites W2035669072 @default.
• W3043365920 cites W2044304240 @default.
• W3043365920 cites W2048194645 @default.
• W3043365920 cites W2057864738 @default.
• W3043365920 cites W2075586275 @default.
• W3043365920 cites W2085953258 @default.
• W3043365920 cites W2092530213 @default.
• W3043365920 cites W2110880661 @default.
• W3043365920 cites W2129599852 @default.
• W3043365920 cites W2146524171 @default.
• W3043365920 cites W2153637879 @default.
• W3043365920 cites W2164451292 @default.
• W3043365920 cites W2166466186 @default.
• W3043365920 cites W2192681950 @default.
• W3043365920 cites W2239692450 @default.
• W3043365920 cites W2275940562 @default.
• W3043365920 cites W2297224872 @default.
• W3043365920 cites W2297724148 @default.
• W3043365920 cites W2332264150 @default.
• W3043365920 cites W2594407917 @default.
• W3043365920 cites W2743891971 @default.
• W3043365920 cites W2754051333 @default.
• W3043365920 cites W2758963656 @default.
• W3043365920 cites W2763778962 @default.
• W3043365920 cites W2801522360 @default.
• W3043365920 cites W2805100542 @default.
• W3043365920 cites W2888778400 @default.
• W3043365920 cites W2904515675 @default.
• W3043365920 cites W2936182368 @default.
• W3043365920 cites W2953427510 @default.
• W3043365920 cites W2980677905 @default.
• W3043365920 cites W3005893245 @default.
• W3043365920 cites W3104801196 @default.
• W3043365920 cites W4211205842 @default.
• W3043365920 cites W795013689 @default.
• W3043365920 doi "https://doi.org/10.1002/aelm.202000291" @default.
• W3043365920 hasPublicationYear "2020" @default.
• W3043365920 type Work @default.
• W3043365920 sameAs 3043365920 @default.
• W3043365920 citedByCount "11" @default.
• W3043365920 countsByYear W30433659202020 @default.
• W3043365920 countsByYear W30433659202021 @default.
• W3043365920 countsByYear W30433659202022 @default.
• W3043365920 countsByYear W30433659202023 @default.
• W3043365920 crossrefType "journal-article" @default.
• W3043365920 hasAuthorship W3043365920A5020365075 @default.
• W3043365920 hasAuthorship W3043365920A5025756253 @default.
• W3043365920 hasAuthorship W3043365920A5026293881 @default.
• W3043365920 hasAuthorship W3043365920A5034932708 @default.
• W3043365920 hasAuthorship W3043365920A5040641357 @default.
• W3043365920 hasAuthorship W3043365920A5046214153 @default.
• W3043365920 hasAuthorship W3043365920A5054462478 @default.
• W3043365920 hasAuthorship W3043365920A5075771135 @default.
• W3043365920 hasAuthorship W3043365920A5078416111 @default.
• W3043365920 hasConcept C119599485 @default.
• W3043365920 hasConcept C127413603 @default.
• W3043365920 hasConcept C145598152 @default.
• W3043365920 hasConcept C165801399 @default.
• W3043365920 hasConcept C172385210 @default.
• W3043365920 hasConcept C192562407 @default.
• W3043365920 hasConcept C2778484494 @default.
• W3043365920 hasConcept C49040817 @default.
• W3043365920 hasConcept C78434282 @default.
• W3043365920 hasConcept C79794668 @default.
• W3043365920 hasConceptScore W3043365920C119599485 @default.
• W3043365920 hasConceptScore W3043365920C127413603 @default.
• W3043365920 hasConceptScore W3043365920C145598152 @default.
• W3043365920 hasConceptScore W3043365920C165801399 @default.
• W3043365920 hasConceptScore W3043365920C172385210 @default.
• W3043365920 hasConceptScore W3043365920C192562407 @default.
• W3043365920 hasConceptScore W3043365920C2778484494 @default.
• W3043365920 hasConceptScore W3043365920C49040817 @default.
• W3043365920 hasConceptScore W3043365920C78434282 @default.
• W3043365920 hasConceptScore W3043365920C79794668 @default.
• W3043365920 hasFunder F4320321001 @default.
• W3043365920 hasFunder F4320322843 @default.
• W3043365920 hasFunder F4320335777 @default.
• W3043365920 hasIssue "8" @default.
• W3043365920 hasLocation W30433659201 @default.
• W3043365920 hasOpenAccess W3043365920 @default.

• next