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• W3044132121 abstract "In this article, we present a novel full-band Monte Carlo device simulator for modeling 4H-SiC power electronic devices in which, for the first time, the Coulomb interactions have been accounted for through a real-space molecular dynamics approach. Proper treatment of the electron–electron interactions is critical for modeling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain on a physical basis the steady-state and the switching behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology." @default.
• W3044132121 created "2020-07-29" @default.
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• W3044132121 date "2020-09-01" @default.
• W3044132121 modified "2023-09-24" @default.
• W3044132121 title "Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions" @default.
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• W3044132121 doi "https://doi.org/10.1109/ted.2020.3007368" @default.
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