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• W3044320338 abstract "In this work, and experimentally propose inserting an SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> intermediate layer between the Ti and n-AlGaN layer to improve the electron injection efficiency. When the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> intermediate layer is adopted, the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer can share a part of the applied voltage and then weakens the surface depletion effect, which is confirmed by the capacitance-voltage measurement. Furthermore, the energy bending of the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer pushes the affinity of Ti to be even higher than the conduction band of the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.60</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.40</sub> N layer, which then screens the Schottky barrier and favors the election injection. The influence of the thickness of the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> intermediate layer is also investigated in this work. When the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer becomes thick, the tunneling capability of the electrons will be significantly limited due to the increased tunnel region width, leading to increased forward voltage." @default.
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• W3044320338 date "2020-09-01" @default.
• W3044320338 modified "2023-10-14" @default.
• W3044320338 title "Advantage of SiO₂ Intermediate Layer on the Electron Injection for Ti/n-Al_0.60Ga_0.40N Structure" @default.
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• W3044320338 doi "https://doi.org/10.1109/ted.2020.3007363" @default.
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