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• W3044777796 endingPage "155352" @default.
• W3044777796 startingPage "155352" @default.
• W3044777796 abstract "Abstract The production cost of photovoltaic solar cells could be reduced by minimizing the number of fabrication steps, e.g., eliminating separate stages of assembling p-layer, n-layer and anti-reflection coating layer. The uniqueness of the present work remains in the single step growth of the n-layer and the simultaneous anti-reflection coating layer via plasma etching of the p-type crystalline silicon (p–c-Si) wafers by low pressure inductively coupled plasma (ICP) CVD system. Chemical and physical etching of the p–c-Si wafer by high density of atomic H and ionic Ar/H species in the (Ar + H2) plasma create surface-roughness that introduce reduced surface reflectance. Further, ejection of Si moieties from the wafer surface produces SiHX (x = 1–4) radicals in the plasma, which in turn instigate re-deposition at the dangling c-Si bond sites and produce variety of silicon nanostructures (Si-NSs). The etching and sequential redeposition effects occur differently on varying gas ratio of Ar/H2, changing plasma pressure and etching temperature. At optimized low pressure (∼100 mTorr) in the plasma crystalline silicon nano-pillar like structures of uniform diameter, length and alignment are produced, from which multiple internal reflections result efficient light trapping and a significantly low reflection loss. Further, the plasma deposited Si nanostructures on the etched p-type c-Si wafer surface changes to n-type in electronic configuration, grown via p-to-n type conductivity conversation (PTNCC) process, initiated by alteration in BH1 bonds to BH2 and/or BH3 configurations. The p-n junction solar cells spontaneously grown via PTNCC mechanism demonstrates a proof-of-concept conversion efficiency, η ∼4.22%, using ITO layer at the front and silver (Ag) paste as the back electrodes." @default.
• W3044777796 created "2020-07-29" @default.
• W3044777796 creator A5088460709 @default.
• W3044777796 date "2020-12-01" @default.
• W3044777796 modified "2023-09-24" @default.
• W3044777796 title "Single-step fabrication of single-junction c-Si nano-structured solar cells by optimization of plasma etching parameters" @default.
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• W3044777796 doi "https://doi.org/10.1016/j.jallcom.2020.155352" @default.
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