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- W3045437599 abstract "In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 1016 cm−3 and the defect density less than 1014 cm−3. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe2 layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm2 in the current density (Jsc) depending on the absorber thickness is obtained." @default.
- W3045437599 created "2020-07-29" @default.
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- W3045437599 date "2020-01-01" @default.
- W3045437599 modified "2023-10-16" @default.
- W3045437599 title "Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se<SUB>2</SUB> Based Solar Cells" @default.
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- W3045437599 doi "https://doi.org/10.4236/ampc.2020.107011" @default.
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