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- W3045694106 abstract "3C-SiC layers of different microstructures (monocrystalline (100) and (111) oriented and polycrystalline) were implanted with high energy (800 keV) 129 Xe ++ ions. Implantations were performed at room temperature (RT) and at 500 °C using two different fluences of Φ 1 = 1x10 16 and Φ 2 = 1x10 17 at/cm 2 . Surface blistering was only observed for RT and Φ 2 implantations into poly-SiC material while mono-SiC kept rather smooth surface. This was due to more homogeneous Xe bubbles distribution (200 nm deep) in the mono-SiC than in the poly-SiC. Xe retention was found to be almost complete for all samples. Some Xe enhanced diffusion was detected in the poly-SiC material which was attributed to grain boundaries. Some irradiation-induced oxidation effect was evidenced, O element being located at the depth where Xe bubbles are accumulating. This was more pronounced for poly than for mono-SiC. These results demonstrate that SiC microstructure affects many aspects of its behavior upon Xe irradiation." @default.
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- W3045694106 date "2020-07-01" @default.
- W3045694106 modified "2023-10-06" @default.
- W3045694106 title "Mono-Versus Poly-Crystalline SiC for Nuclear Applications" @default.
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- W3045694106 doi "https://doi.org/10.4028/www.scientific.net/msf.1004.139" @default.
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