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- W3046831408 abstract "Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd 2 Se 3 is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd 2 Se 3 is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd 2 Se 3 on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd 2 Se 3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd 2 Se 3 can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd 2 Se 3 provide a promising platform for future investigations and applications." @default.
- W3046831408 created "2020-08-07" @default.
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- W3046831408 date "2020-10-01" @default.
- W3046831408 modified "2023-10-02" @default.
- W3046831408 title "Epitaxial synthesis and electronic properties of monolayer Pd<sub>2</sub>Se<sub>3</sub>*" @default.
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- W3046831408 doi "https://doi.org/10.1088/1674-1056/abab80" @default.
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