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- W3046884179 abstract "Pushing the limits of electronics to higher performance has always been constrained by fatigue and failure of the constituting devices. For high-speed resistive-switching components, this problem is particularly important. Here, we used complementary nanoimaging techniques to explore electrical damage in a resistive-switching material VO2. The revealed mechanisms of electrical damage include surface melting, coalescence of material into droplets, and ablation. This three-stage scenario is likely to be found in other correlated oxides and more broadly in the general class of resistive-switching systems. We suggest strategies for preventing the electrical failure of devices in resistive-switching technology." @default.
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- W3046884179 date "2020-08-01" @default.
- W3046884179 modified "2023-09-28" @default.
- W3046884179 title "Nanoimaging of Electrical Failure in VO<sub>2</sub> Resistive-Switching Nanodevices" @default.
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- W3046884179 doi "https://doi.org/10.1021/acsaelm.0c00382" @default.
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