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- W3047110932 abstract "We present a monolithic hybrid visible-light imager composed of an amorphous selenium (a-Se) photoconductor thin film integrated on a CMOS active pixel sensor (APS) array readout integrated circuit. We achieve more than 14-dB signal-to-noise ratio under monochromatic light at an illuminance of 0.04 lux in one quadrant of the imager containing $7.8times 7.8-mu ,,text{m}^{2}$ pixels using a 1.6-s exposure (integration) time without operating the a-Se sensor in avalanche mode. Long integration times are made possible by exploiting the low dark-current of a 20- $mu text{m}$ -thick a-Se sensor layer and by implementing dark-current reduction techniques in the APS, such as series stacking reset and protection devices. In addition, use of a relatively thick 20- $mu text{m}$ a-Se layer obviates the need for an additional planarization step of the sensing layer as was done with a previously-reported avalanche-mode a-Se/CMOS imager that incorporated a 0.5- $mu text{m}$ -thick sensing layer. We also demonstrate an improved APS design, with $7.8times 8.7-mu ,,text{m}^{2}$ dimensions, containing a programmable in-pixel integration capacitor to provide enhanced full-well capacity (FWC) for a-Se/CMOS imagers. Measured results show that our APS achieves a FWC of approximately 230 ke−, which is comparable to several previously-reported photodiode-based CMOS imagers with extended FWC. Our imager can also resolve an effective object size of approximately $12.5~mu text{m}$ , demonstrated through measurement of the modulation transfer function." @default.
- W3047110932 created "2020-08-10" @default.
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- W3047110932 date "2021-01-01" @default.
- W3047110932 modified "2023-10-17" @default.
- W3047110932 title "A Monolithic Amorphous-Selenium/CMOS Visible-Light Imager With Sub-9-μm Pixel Pitch and Extended Full-Well Capacity" @default.
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- W3047110932 doi "https://doi.org/10.1109/jsen.2020.3014073" @default.
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