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- W3048008588 abstract "InxAl1-xAs1-ySby is the only III-V material lattice-matched to InP with a direct bandgap energy range as large as ~1.45–1.80 eV, making it interesting for multiple optoelectronic applications. However, inherent material challenges in this immature quaternary alloy have thus far precluded the growth of InxAl1-xAs1-ySby with device-quality properties at the InP lattice constant. We have investigated how molecular beam epitaxy growth conditions affect the photoluminescence intensity, spectrum, temperature- and power-dependence, as well as the surface morphology of In0.23Al0.77As0.75Sb0.25, which is lattice-matched to InP with bandgap energy of ~1.68 eV as measured by ellipsometry. We find that reducing the adatom mobility, via a lower substrate temperature and higher group-V overpressure, diminishes the tendency for phase separation, but also quenches the photoluminescence intensity. These findings provide a step toward identifying an optimal growth window for realizing high-quality, wide-bandgap InxAl1-xAs1-ySby lattice-matched to InP." @default.
- W3048008588 created "2020-08-13" @default.
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- W3048008588 date "2020-10-01" @default.
- W3048008588 modified "2023-09-25" @default.
- W3048008588 title "Effect of molecular beam epitaxy growth conditions on phase separation in wide-bandgap InAlAsSb lattice-matched to InP" @default.
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- W3048008588 doi "https://doi.org/10.1016/j.jcrysgro.2020.125826" @default.
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