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- W3048244864 abstract "Scaling of transistors has been a challenging task among researchers. The conventional TFETs do offer a solution to this problem. However, TFETs based on simple silicon material fail to obtain high ON current and suffer from an ambipolar conduction during negative gate voltages. In this paper, we have proposed a hetero gate dielectric based tunnel FET structure with SiGe used at a source. The low bandgap energy material decreases the tunneling width at the junction, hence increases the ON current of a device. A buried oxide layer is constructed of SiO 2 below the source and HfO 2 below the drain to suppress ambipolar conduction. Analysis has been carried out in terms of the $I_{ON}/I_{OFF}$ ratio, gate function variation, mole fraction variation and the subthreshold swing parameters. Results have shown improvements in I ON and suppression of ambipolar conduction in the proposed TFET device." @default.
- W3048244864 created "2020-08-13" @default.
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- W3048244864 date "2020-06-01" @default.
- W3048244864 modified "2023-10-16" @default.
- W3048244864 title "Hetero-gate Dielectric with Hetero Dielectric BOX for Suppressing Ambipolar Current in Tunnel FETs" @default.
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- W3048244864 doi "https://doi.org/10.1109/iciem48762.2020.9160161" @default.
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