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• W3048313489 abstract "In this study, we report a power factor (PF) value as high as 1950 μW m−1 K−2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature." @default.
• W3048313489 created "2020-08-13" @default.
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• W3048313489 date "2020-08-03" @default.
• W3048313489 modified "2023-09-24" @default.
• W3048313489 title "Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping" @default.
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• W3048313489 doi "https://doi.org/10.1063/5.0012087" @default.
• W3048313489 hasPublicationYear "2020" @default.
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