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• W3048396325 abstract "In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:msub> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mi mathvariant=normal>A</mml:mi> <mml:mi mathvariant=normal>l</mml:mi> </mml:mrow> <mml:mi>x</mml:mi> </mml:msub> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:msub> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mi mathvariant=normal>G</mml:mi> <mml:mi mathvariant=normal>a</mml:mi> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo stretchy=false>(</mml:mo> <mml:mn>1</mml:mn> <mml:mo>−<!-- − --></mml:mo> <mml:mi>x</mml:mi> <mml:mo stretchy=false>)</mml:mo> </mml:mrow> </mml:msub> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mi mathvariant=normal>N</mml:mi> </mml:mrow> </mml:math> strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>220</mml:mn> </mml:mrow> <mml:mi mathvariant=normal>%<!-- % --></mml:mi> </mml:math> , reduces electron leakage by <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>11</mml:mn> </mml:mrow> </mml:math> times, and enhances optical power by <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>225</mml:mn> </mml:mrow> <mml:mi mathvariant=normal>%<!-- % --></mml:mi> </mml:math> at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>61.5</mml:mn> </mml:mrow> <mml:mi mathvariant=normal>%<!-- % --></mml:mi> </mml:math> which is <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>72</mml:mn> </mml:mrow> <mml:mi mathvariant=normal>%<!-- % --></mml:mi> </mml:math> higher, and IQE droop is <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>12.4</mml:mn> </mml:mrow> <mml:mi mathvariant=normal>%<!-- % --></mml:mi> </mml:math> , which is <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>333</mml:mn> </mml:mrow> <mml:mi mathvariant=normal>%<!-- % --></mml:mi> </mml:math> less compared to the conventional AlGaN EBL LED structure at <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mn>284.5</mml:mn> </mml:mrow> <mml:mspace width=thickmathspace /> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mi mathvariant=normal>n</mml:mi> <mml:mi mathvariant=normal>m</mml:mi> </mml:mrow> </mml:math> wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters." @default.
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• W3048396325 date "2020-09-11" @default.
• W3048396325 modified "2023-09-24" @default.
• W3048396325 title "High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure" @default.
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• W3048396325 doi "https://doi.org/10.1364/ol.400917" @default.
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