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• W3048483806 endingPage "109977" @default.
• W3048483806 startingPage "109977" @default.
• W3048483806 abstract "The thermoelectric materials so far discovered have shown thermoelectric behavior at relatively higher temperatures. Low temperature thermoelectric materials are the need of the hour and in this work we have studied the thermoelectric behavior of 2D monolayer of XI 2 (X = Sn, Si) at relatively low temperature by using Density Functional Theory (DFT) along with the Boltzmann Transport equation. We have found high thermoelectric figure of merit (ZT) for SnI 2 and SiI 2 at 600 K. At room temperature the maximum ZT is 0.66 (0.35), 0.78 (0.51) for p-type (n-type) SnI 2 and SiI 2 respectively and at 600 K it is 0.83 for SiI 2 . The study of the optical properties of both the materials shows that both of them have indirect band gap with SnI 2 having a band gap of 2.06 eV where as SiI 2 has a band gap of 1.63 eV. Both the materials have a very high absorption coefficient in the ultraviolet (UV) region hence these materials can be used as high sensitive UV photodetectors. Thus the SnI 2 and SiI 2 2D monolayers can have potential application in optoelectronic as well as thermoelectric device fabrication." @default.
• W3048483806 created "2020-08-18" @default.
• W3048483806 creator A5016254695 @default.
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• W3048483806 date "2021-01-01" @default.
• W3048483806 modified "2023-10-04" @default.
• W3048483806 title "Low-temperature thermoelectric behavior and impressive optoelectronic properties of two-dimensional XI2 (X = Sn, Si): A first principle study" @default.
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• W3048483806 doi "https://doi.org/10.1016/j.commatsci.2020.109977" @default.
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