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• W3048508105 abstract "We report on BCl 3 -based dry etching characteristics of (100) β- Ga 2 O 3 flakes using inductively coupled plasma etching technique, which were prepared by mechanical exfoliation from <?CDATA $(bar{2}01)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mover accent=true> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>01</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> Ga 2 O 3 single crystal. The etch rate of (100) Ga 2 O 3 flake increased with increasing bias rf powers up to 52 nm min −1 using 25 sccm BCl 3 /15 sccm N 2 gas chemistry. We also examined the etch rate dependence of Ga 2 O 3 on crystal orientation. The (100) Ga 2 O 3 flake has the lowest etch rate when compared with (010) and <?CDATA $(bar{2}01)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mover accent=true> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>01</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> Ga 2 O 3 surfaces. The lowest etch rate of (100) Ga 2 O 3 surface results from less Ga-O bond breaking efficiency and low dangling bond density on the surface. It is notable that <?CDATA $(bar{2}01)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mover accent=true> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> <mml:mn>01</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> Ga 2 O 3 surface is etched at higher rate than (010) and (100) Ga 2 O 3 surfaces. The surface morphologies of etched (100) Ga 2 O 3 surface exhibited little change, and rms roughness values remained less than 1.5 nm over a broad range of etch conditions." @default.
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• W3048508105 date "2020-01-09" @default.
• W3048508105 modified "2023-10-15" @default.
• W3048508105 title "BCl₃-Based Dry Etching of Exfoliated (100) ß-Ga₂O₃ Flakes" @default.
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• W3048508105 doi "https://doi.org/10.1149/2162-8777/abae14" @default.
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