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- W3048791424 abstract "Semiconducting absorbers in high-performance short-wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single-crystalline germanium and III–V semiconductors. However, these materials require complex growth and device fabrication procedures. Here, thermally evaporated SexTe1-x alloy thin films with tunable bandgaps for the fabrication of high-performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of SexTe1-x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of SexTe1-x film-based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al2O3 to enhance its absorption near the bandgap edge, the Se0.32Te0.68 film (an optical bandgap of ≈0.8 eV)-based photoconductor exhibits a cut-off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW−1 and implied detectivity of 6.5 × 1010 cm Hz1/2 W−1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se0.32Te0.68-based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems." @default.
- W3048791424 created "2020-08-18" @default.
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- W3048791424 date "2020-08-09" @default.
- W3048791424 modified "2023-10-11" @default.
- W3048791424 title "Evaporated Se <i> <sub>x</sub> </i> Te <sub>1‐</sub> <i> <sub>x</sub> </i> Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors" @default.
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- W3048791424 doi "https://doi.org/10.1002/adma.202001329" @default.
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