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- W3058779839 abstract "In this work, the drain structure of a p-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the drain of silicon-based TFET. Two structures are compared with conventional TFET, one, SiGe is located on the top of Si in the drain and another one in reverse. Simulations approve these structures can reduce sub-threshold swing, OFF-current several times, and increase the ON-OFF ratio. Band diagram for conduction and valance bands are investigated and band to band tunneling (BTBT) generation rate is used to find better performance. We find current flows at Si in the drain with the wider bandgap. Ge mole fraction of SiGe is varied and its effects on the performance of TFET are studied. The SiGe thickness for both structures is explored to obtain the best thickness for SiGe." @default.
- W3058779839 created "2020-08-24" @default.
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- W3058779839 date "2020-08-19" @default.
- W3058779839 modified "2023-09-27" @default.
- W3058779839 title "Performance Enhancement of Thin-Film Tunneling FETs by Drain Material Engineering Using an Ultra-Thin SiGe" @default.
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