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- W307775183 abstract "The methodology for designing the insulated-gate bipolar transistor (IGBT) cell structure for achieving a broad range of blocking voltage ratings is discussed in this chapter by using analytical models. The design of the threshold voltage of the IGBT is related to the channel doping profile. The optimization of the doping and width of the drift region in the symmetric and asymmetric structure is described to obtain the required blocking voltage capability. The on-state characteristics for the symmetric, asymmetric, and transparent emitter IGBTs are related to the injected carrier distribution as determined by the minority carrier lifetime in the drift region, the buffer layer doping and thickness, and the doping and thickness of the collector region, respectively. The stored charge in the drift region of these devices is used to develop the turn-off switching waveforms for the collector voltage and current so that the energy loss per switching event can be computed. The trade-off curve between on-state voltage drop and switching losses is generated for each device and its maximum operating frequency is analyzed. The performance of silicon carbide IGBT is also included here." @default.
- W307775183 created "2016-06-24" @default.
- W307775183 creator A5082402100 @default.
- W307775183 date "2015-01-01" @default.
- W307775183 modified "2023-09-23" @default.
- W307775183 title "IGBT Structural Design" @default.
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- W307775183 doi "https://doi.org/10.1016/b978-1-4557-3143-5.00003-1" @default.
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