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- W3080363627 abstract "The effect of induced channel strain on surface quantisation at inversion has been studied using SiO 2 and ZrO 2 as the gate dielectrics on strained-Si/SiGe MOS structures. The location of charge centroid and its carrier distribution have been observed to change significantly with high-k gate dielectrics in comparison to SiO 2 and also with the induced strain in the channel. The charge centroid location and peak carrier density have significant impact on the measured oxide thickness and consequently the device parametric values since it alters carrier transport along the channel." @default.
- W3080363627 created "2020-09-01" @default.
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- W3080363627 date "2009-12-01" @default.
- W3080363627 modified "2023-09-24" @default.
- W3080363627 title "Effect of strain on charge centroid location in SiO 2 /s-Si/SiGe and ZrO 2 /s-Si/SiGe MOS capacitors" @default.
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