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• W3081473012 abstract "Herein, we investigate wet-chemical etching of Ge (100) in acidic H 2 O 2 solutions for technologically advanced device processing. Nanoscale etching kinetics data were provided by inductively coupled plasma mass spectrometry (ICP-MS) measurements. Rotation rate- dependent measurement showed that the hydrodynamics of the system is important. The dependence of the etch rate on the HCl concentration was considered for the range 0.001–1 M HCl. A stark difference morphologically for >1 M HCl, which resulted in a rough surface confirmed by atomic force microscopy (AFM) images, has been observed. X-ray photoelectron spectroscopy (XPS) measurements provided insight in the surface chemistry of etching for device processing. Electrochemical measurements confirmed that the etching process follows a chemical mechanism. Based on X-ray photoelectron spectroscopy (XPS) data, we present reaction schemes that help to understand the results." @default.
• W3081473012 created "2020-09-01" @default.
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• W3081473012 date "2020-01-09" @default.
• W3081473012 modified "2023-10-03" @default.
• W3081473012 title "Wet Chemical Processing of Ge in Acidic H₂O₂ Solution: Nanoscale Etching and Surface Chemistry" @default.
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• W3081473012 doi "https://doi.org/10.1149/2162-8777/abb1c5" @default.
• W3081473012 hasPublicationYear "2020" @default.
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