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- W3082319809 abstract "In this study, a 1550-nm Ge-on-Si photodetector coupled with a Si waveguide on siliconon-insulator (SOI) platform has been fabricated and characterized with a particular emphasis on the backend-of-the-line (BEOL) process. A comparison study of the effects of different metallization schemes on the responsivity has been conducted. Compared to the photodetector with a bulk metal contact, those with single-layered and double-layered contact-hole arrays demonstrated improvements in the optical responsivity at an operating voltage of 1 V. Especially, double-layer scheme showed prominent increase in photon-induced current without significant increase in dark current." @default.
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- W3082319809 date "2020-08-31" @default.
- W3082319809 modified "2023-10-17" @default.
- W3082319809 title "Ge-on-Si Photodetector with Enhanced Optical Responsivity by Advanced Metallization Geometry" @default.
- W3082319809 doi "https://doi.org/10.5573/jsts.2020.20.4.366" @default.
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