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- W3082463485 abstract "Novel MOSFET structures have been investigated extensively by researchers in recent years. The present paper investigates techniques for enhancement of drain current in FD (Fully Depleted) MOSFETs through use of novel materials to substitute the standard silicon dioxide gates. Consequently, a mathematical model is formulated to compare the change in drain current characteristics when titanium dioxide gate is used. The results obtained are in agreement with the hardware modelling and software simulation results obtained by other researchers in the field." @default.
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- W3082463485 date "2020-07-01" @default.
- W3082463485 modified "2023-09-26" @default.
- W3082463485 title "Mathematical Modelling of Drain Current Enhancement in High-k FD MOSFET" @default.
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- W3082463485 doi "https://doi.org/10.1109/vlsidcs47293.2020.9179881" @default.
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