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• W3086674583 abstract "In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the corresponding Weibull slopes, β, of the MOS capacitors with various LaAlO3 thicknesses were calculated. In addition, a modified percolation model was proposed to consider the extrinsic factors of breakdown. These extrinsic factors were described by an equivalent reduction of the path-to-breakdown, tex, in the model. Using this model, the calculated tex of the MOS capacitor was 5.8 nm." @default.
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• W3086674583 date "2009-10-19" @default.
• W3086674583 modified "2023-09-27" @default.
• W3086674583 title "Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric" @default.
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• W3086674583 doi "https://doi.org/10.1063/1.3250242" @default.
• W3086674583 hasPublicationYear "2009" @default.
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