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• W3086979620 abstract "The time kinetics of hot carrier degradation (HCD) is modeled using a reaction diffusion drift (RDD) framework. It is incorporated into Sentaurus Device TCAD and validated using conduction mode HCD data in n- and p-channel MOSFETs and FinFETs. RDD-enabled TCAD calculates carrier-energy-initiated generation of interface traps (ΔN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>IT</sub> ) and the impact of the resulting localized charges on device parametric drift. HCD at various gate (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) and drain (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> ) biases spanning various modes (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ≤ and > V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> ) are simulated for low stress V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> (<; 3 V). The self-heating (SH)-effect-induced temperature (T) increase is invoked for FinFETs. Data from various experiments are analyzed and a wide range of power-law time kinetics slope (n) is explained." @default.
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• W3086979620 date "2020-11-01" @default.
• W3086979620 modified "2023-10-18" @default.
• W3086979620 title "TCAD Framework for HCD Kinetics in Low V_D Devices Spanning Full V_G/V_D Space" @default.
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• W3086979620 doi "https://doi.org/10.1109/ted.2020.3021360" @default.
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