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• W3087098574 abstract "We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon." @default.
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• W3087098574 date "2020-09-21" @default.
• W3087098574 modified "2023-09-26" @default.
• W3087098574 title "Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs" @default.
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• W3087098574 doi "https://doi.org/10.3390/cryst10090842" @default.
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