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• W3087552008 abstract "Abstract For application as precursor layers for silicon solar cells fabricated by laser liquid phase crystallization, thick amorphous silicon films on glass are of interest. However, for hydrogenated amorphous silicon (a-Si:H) precursor layers containing about 10 at.% hydrogen, hydrogen needs to be removed prior to liquid phase crystallization to avoid bubble formation and peeling. For this purpose, an at least 12 hours annealing procedure up to 550°C is considered necessary thus involving long process time and high costs. In this article, we investigate the use of thick hot wire grown a-Si:H films which turn out to need considerably less time for dehydrogenation than dense plasma-grown a-Si:H. The dehydrogenation process is studied by depth profiles of hydrogen concentration and medium range order (MRO) using Raman spectroscopy analysis at etch pits. The results show already at an annealing temperature of 450°C the disappearance of all detectable H in the substrate-near part and the complete removal of H at 550°C after about 4 hours annealing. We attribute this rather fast hydrogen removal to the formation of interconnected voids primarily in the substrate-near range. In the same range of the film, we find a correlation between hydrogen concentration and medium range order suggesting that a silicon network reconstruction due to hydrogen out-diffusion causes an observed decrease of reciprocal MRO. The results stress the importance of void-related microstructure in the a-Si:H for hydrogen removal at a rather low annealing temperature and short annealing time. Our results suggest that hot wire a-Si:H films which can be grown with a high deposition rate and a rather pronounced void-related microstructure may be well suited as economic precursor layers." @default.
• W3087552008 created "2020-09-25" @default.
• W3087552008 creator A5005636467 @default.
• W3087552008 creator A5006392012 @default.
• W3087552008 creator A5020871667 @default.
• W3087552008 creator A5032379554 @default.
• W3087552008 creator A5069915827 @default.
• W3087552008 creator A5084518052 @default.
• W3087552008 creator A5089966192 @default.
• W3087552008 date "2020-11-01" @default.
• W3087552008 modified "2023-09-27" @default.
• W3087552008 title "Raman spectroscopic analysis of the effect of annealing on hydrogen concentration and microstructure of thick hot wire grown a-Si:H films aimed as precursor layers for crystallized thin film silicon" @default.
• W3087552008 cites W1859715300 @default.
• W3087552008 cites W1970717551 @default.
• W3087552008 cites W1972751784 @default.
• W3087552008 cites W1974134045 @default.
• W3087552008 cites W1976406735 @default.
• W3087552008 cites W1990666226 @default.
• W3087552008 cites W1995911250 @default.
• W3087552008 cites W1997536240 @default.
• W3087552008 cites W2000608990 @default.
• W3087552008 cites W2001621813 @default.
• W3087552008 cites W2002700659 @default.
• W3087552008 cites W2003901165 @default.
• W3087552008 cites W2005843580 @default.
• W3087552008 cites W2025240731 @default.
• W3087552008 cites W2032123903 @default.
• W3087552008 cites W2036138787 @default.
• W3087552008 cites W2038627540 @default.
• W3087552008 cites W2039274794 @default.
• W3087552008 cites W2040572926 @default.
• W3087552008 cites W2044397311 @default.
• W3087552008 cites W2044532878 @default.
• W3087552008 cites W2053208575 @default.
• W3087552008 cites W2055514114 @default.
• W3087552008 cites W2060099987 @default.
• W3087552008 cites W2064392129 @default.
• W3087552008 cites W2065205721 @default.
• W3087552008 cites W2077010593 @default.
• W3087552008 cites W2086003436 @default.
• W3087552008 cites W2090911757 @default.
• W3087552008 cites W2096264965 @default.
• W3087552008 cites W2165938794 @default.
• W3087552008 cites W2283779064 @default.
• W3087552008 cites W2287189602 @default.
• W3087552008 cites W2328802043 @default.
• W3087552008 cites W2429680 @default.
• W3087552008 cites W2613583206 @default.
• W3087552008 cites W2750959640 @default.
• W3087552008 cites W2791214169 @default.
• W3087552008 cites W3007661440 @default.
• W3087552008 cites W638170594 @default.
• W3087552008 cites W1992868467 @default.
• W3087552008 doi "https://doi.org/10.1016/j.tsf.2020.138353" @default.
• W3087552008 hasPublicationYear "2020" @default.
• W3087552008 type Work @default.
• W3087552008 sameAs 3087552008 @default.
• W3087552008 citedByCount "0" @default.
• W3087552008 crossrefType "journal-article" @default.
• W3087552008 hasAuthorship W3087552008A5005636467 @default.
• W3087552008 hasAuthorship W3087552008A5006392012 @default.
• W3087552008 hasAuthorship W3087552008A5020871667 @default.
• W3087552008 hasAuthorship W3087552008A5032379554 @default.
• W3087552008 hasAuthorship W3087552008A5069915827 @default.
• W3087552008 hasAuthorship W3087552008A5084518052 @default.
• W3087552008 hasAuthorship W3087552008A5089966192 @default.
• W3087552008 hasConcept C113196181 @default.
• W3087552008 hasConcept C119889771 @default.
• W3087552008 hasConcept C120665830 @default.
• W3087552008 hasConcept C121332964 @default.
• W3087552008 hasConcept C127413603 @default.
• W3087552008 hasConcept C159985019 @default.
• W3087552008 hasConcept C161790260 @default.
• W3087552008 hasConcept C171250308 @default.
• W3087552008 hasConcept C178790620 @default.
• W3087552008 hasConcept C185592680 @default.
• W3087552008 hasConcept C19067145 @default.
• W3087552008 hasConcept C191897082 @default.
• W3087552008 hasConcept C192562407 @default.
• W3087552008 hasConcept C203036418 @default.
• W3087552008 hasConcept C2776390347 @default.
• W3087552008 hasConcept C2777855556 @default.
• W3087552008 hasConcept C2779667780 @default.
• W3087552008 hasConcept C40003534 @default.
• W3087552008 hasConcept C42360764 @default.
• W3087552008 hasConcept C43617362 @default.
• W3087552008 hasConcept C512968161 @default.
• W3087552008 hasConcept C544956773 @default.
• W3087552008 hasConcept C55493867 @default.
• W3087552008 hasConcept C56052488 @default.
• W3087552008 hasConcept C80086925 @default.
• W3087552008 hasConcept C8010536 @default.
• W3087552008 hasConcept C87976508 @default.
• W3087552008 hasConceptScore W3087552008C113196181 @default.
• W3087552008 hasConceptScore W3087552008C119889771 @default.
• W3087552008 hasConceptScore W3087552008C120665830 @default.
• W3087552008 hasConceptScore W3087552008C121332964 @default.
• W3087552008 hasConceptScore W3087552008C127413603 @default.
• W3087552008 hasConceptScore W3087552008C159985019 @default.
• W3087552008 hasConceptScore W3087552008C161790260 @default.

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