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- W3087599465 abstract "Abstract Black phase CsPbI 3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ- CsPbI 3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI 3 device applications." @default.
- W3087599465 created "2020-09-25" @default.
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- W3087599465 date "2020-09-21" @default.
- W3087599465 modified "2023-10-17" @default.
- W3087599465 title "Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices" @default.
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- W3087599465 doi "https://doi.org/10.1038/s41467-020-18380-1" @default.
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