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• W3089077683 abstract "Hexagonal 4H-silicon carbide (4H-SiC) is a transversely isotropic substrate garnering interest for precision MEMS devices such as resonant gyroscopes. This paper investigates the elastic anisotropy of 4H-SiC by utilizing capacitive bulk acoustic wave (BAW) resonators with ultra-high mechanical quality factors (Q) enabled by phononic crystals. We directly measure the value of C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>66</sub> using Lamé mode resonators for the first time and numerically fit the values of C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sub> and C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sub> using BAW elliptical modes in center-supported solid disk resonators. We compare (00 01) 4H-SiC to (111) Si, another in-plane isotropic material and validate (0 001) 4H-SiC's superior robustness to fabrication and design variations. Measurement of in-plane BAW elliptical modes in multiple disk resonators with as-born frequency splits as low as 3 ppm reveal (00 01) 4H-SiC's transverse isotropy across process corners. Lamé mode resonators display a temperature coefficient of frequency (TCF) three times lower compared to its Si counterpart. Finally, this paper provides a modified set of elastic constants for 4H-SiC with a view towards monocrystalline SiC MEMS devices." @default.
• W3089077683 created "2020-10-01" @default.
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• W3089077683 date "2020-12-01" @default.
• W3089077683 modified "2023-10-02" @default.
• W3089077683 title "Investigating Elastic Anisotropy of 4H-SiC Using Ultra-High <i>Q</i> Bulk Acoustic Wave Resonators" @default.
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• W3089077683 doi "https://doi.org/10.1109/jmems.2020.3022765" @default.
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