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- W3089142859 abstract "Abstract A high-performance III–V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candidates for commercially viable Si-based lasers. Great efforts have been made to overcome the challenges due to the heteroepitaxial growth, including threading dislocations and anti-phase boundaries, by growing a more than 2 µ m thick III–V buffer layer. However, this relatively thick III–V buffer layer causes the formation of thermal cracks in III–V epi-layers, and hence a low yield of Si-based optoelectronic devices. In this paper, we demonstrate a usage of thin Ge buffer layer to replace the initial part of GaAs buffer layer on Si to reduce the overall thickness of the structure, while maintaining a low density of defects in III–V layers and hence the performance of the InAs/GaAs QD laser. A very high operating temperature of 130 °C has been demonstrated for an InAs/GaAs QD laser by this approach." @default.
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- W3089142859 date "2020-10-22" @default.
- W3089142859 modified "2023-09-27" @default.
- W3089142859 title "All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates" @default.
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- W3089142859 doi "https://doi.org/10.1088/1361-6463/abbb49" @default.
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