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- W3089443003 abstract "The morphology of GaN-on-GaN vertical p-i-n diode devices after reverse-bias electrical stressing to breakdown has been investigated. All failed devices had irreversible structural damage, showing large surface craters that were ∼15–35 μm deep with lengthy surface cracks. Cross-sectional electron micrographs of failed devices showed substantial concentrations of threading dislocations around the cracks and near the crater surfaces. Progressive ion-milling across damaged devices revealed high densities of threading dislocations and the presence of voids beneath the surface cracks; these features were not observed in any unstressed devices. These results should serve as a useful reference for future reliability studies of vertical high-power GaN devices." @default.
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- W3089443003 date "2020-09-28" @default.
- W3089443003 modified "2023-10-18" @default.
- W3089443003 title "Structural breakdown in high power GaN-on-GaN <i>p-n</i> diode devices stressed to failure" @default.
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- W3089443003 doi "https://doi.org/10.1116/6.0000488" @default.
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