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• W3089667052 abstract "Abstract We investigated the electrical properties and operational stability of amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). We fabricated the a-ITZO TFTs using deposition by radio frequency sputtering at room temperature followed by a rapid thermal annealing (RTA) process at different temperatures and oxygen pressure ( P O2 ). This is a more practical annealing route compared to a conventional furnace. Based on film densification and oxygen vacancy optimization, the a-ITZO TFTs exhibited 9.8 cm 2 Vs −1 , 0.82 V/decade and 1.39 V, for saturation mobility, sub-threshold swing and threshold voltage, respectively. Operation stability tests and hysteresis behavior of a-ITZO TFTs suggest that oxygen vacancy concentration of a-ITZO thin films gradually decreases under higher P O2 , consequently affecting the threshold voltage and the shift seen after a gate bias stress test. This observation suggests that gate bias stress and hysteresis stability of an a-ITZO device is due to the effect of oxygen-controlled pressure in the RTA process. This a-ITZO TFTs electrical characterization qualitatively coincides with x-ray photoelectron spectroscopic analyses of oxygen vacancy concentration in a-ITZO thin films. Thus, our systematic a-ITZO thin film optimization using the oxygen-ambient RTA process is a practical basis for high-performance amorphous oxide semiconductor TFT post-annealing methods." @default.
• W3089667052 created "2020-10-08" @default.
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• W3089667052 date "2020-10-23" @default.
• W3089667052 modified "2023-10-05" @default.
• W3089667052 title "Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing" @default.
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• W3089667052 doi "https://doi.org/10.1088/1361-6641/abbc8f" @default.
• W3089667052 hasPublicationYear "2020" @default.
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