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- W3089723403 abstract "Direct integration of III–V semiconductor light sources on silicon is an essential step toward the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared (MIR) spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing, and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices was also used, resulting in a low surface dislocation density of approximately 4 × 107 cm−2. The InAs/InAsSb wells exhibited a strong photoluminescence signal at elevated temperatures. Analysis of these results indicates that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems." @default.
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- W3089723403 date "2020-09-28" @default.
- W3089723403 modified "2023-10-14" @default.
- W3089723403 title "Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon" @default.
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- W3089723403 doi "https://doi.org/10.1063/5.0022235" @default.
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