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- W3091252630 abstract "Based on density functional theory (DFT), the effects of scandium (Sc) doping and oxygen vacancy (V O ) on the electronic states and optical properties of monoclinic BiVO 4 (m-BiVO 4 ) are investigated. The generalized gradient approximation plus U (GGA+U) method is adopted during the calculation of the electronic properties to compensate for the limitations of the DFT method. The ideal m-BiVO 4 has a direct band gap of 2.400 eV, and if Bi in m-BiVO 4 is substituted by Sc (sub Sc-Bi ), the direct band gap will be reduced to 2.393 eV. However, if V is replaced by Sc (sub Sc-V ) as well as oxygen vacancy induced (sub Sc–V +V O ), the band gap will become indirect with values of 1.913 and 2.198 eV, respectively. The reduction capability is in the sequence of sub Sc–Bi > ideal > sub Sc–V +V O > sub Sc–V , while the oxidation capability is in the order of ideal > sub Sc–Bi > sub Sc–V +V O > sub Sc–V . The ε 1 (0) of the ideal, sub Sc–Bi , sub Sc–V , and sub Sc–V +V O defective m-BiVO 4 are 8.290, 8.293, 12.791, and 8.285, respectively. The optical absorptions of ideal and sub Sc–Bi m-BiVO 4 show anisotropy and they are nearly independent of the defect concentration. Sub Sc–V m-BiVO 4 exhibits stronger absorption than the other three semiconductors. The absorptions of sub Sc–V +V O m-BiVO 4 vary widely with the defect concentrations, where 3.906% defect concentration of m-BiVO 4 has the strongest absorption. The estimated optical band gaps [Formula: see text] are smaller than E g for ideal and defective m-BiVO 4 ." @default.
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- W3091252630 date "2021-06-01" @default.
- W3091252630 modified "2023-09-25" @default.
- W3091252630 title "The effects of Sc doping and O vacancy on the electronic states and optical properties of m-BiVO<sub>4</sub>" @default.
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- W3091252630 doi "https://doi.org/10.1139/cjp-2020-0284" @default.
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