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- W3092001152 abstract "Plasma etching is an important process in the semiconductor manufacturing process. In order to precisely control the ion energy for better process quality, a tailored pulse-shape voltage waveform is applied to the plasma reactor table. Traditionally, a linear amplifier is used to generate this waveform, which results in poor efficiency. This paper proposes a switched-mode power amplifier as a substitute to the traditional linear amplifier. The electric equivalent circuit of the plasma reactor is introduced and a basic topology for the switched-mode power amplifier is derived. The basic topology is able to generate the required waveform but it has a low efficiency of charging the capacitive load in practice. Therefore, an efficiency-improved topology is proposed by adopting resonant charging. A prototype is built in order to validate the research. The experiments show that the presented solution yields a significantly reduced input power compared to the normally used linear amplifier in this application." @default.
- W3092001152 created "2020-10-15" @default.
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- W3092001152 date "2020-09-01" @default.
- W3092001152 modified "2023-09-26" @default.
- W3092001152 title "A Switched-Mode Power Amplifier for Ion Energy Control In Plasma Etching" @default.
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- W3092001152 doi "https://doi.org/10.23919/epe20ecceeurope43536.2020.9215859" @default.
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