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• W3092997974 endingPage "2055" @default.
• W3092997974 startingPage "2055" @default.
• W3092997974 abstract "In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al2O3-based resistive switching memory using the conventional device working operation with a forming process. Here, filamentary switching can be classified into two types depending on the compliance current. On top of that, the homogeneous switching is obtained by using a negative differential resistance effect before the forming or setting process in a negative bias. The variations of the low-resistance and high-resistance states in the homogeneous switching are comparable to the filamentary switching cases. However, the drift characteristics of the low-resistance and high-resistance states in the homogeneous switching are unstable with time. Therefore, the short-term plasticity effects, such as the current decay in repeated pulses and paired pulses facilitation, are demonstrated when using the resistance drift characteristics. Finally, the conductance can be increased and decreased by 50 consecutive potentiation pulses and 50 consecutive depression pulses, respectively. The linear conductance update in homogeneous switching is achieved compared to the filamentary switching, which ensures the high pattern-recognition accuracy." @default.
• W3092997974 created "2020-10-22" @default.
• W3092997974 creator A5023775442 @default.
• W3092997974 creator A5044537167 @default.
• W3092997974 date "2020-10-18" @default.
• W3092997974 modified "2023-10-18" @default.
• W3092997974 title "Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack" @default.
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• W3092997974 doi "https://doi.org/10.3390/nano10102055" @default.
• W3092997974 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/7603159" @default.
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• W3092997974 hasPublicationYear "2020" @default.
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