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- W3093217526 abstract "Abstract Ultrafast optical reflectivity measurements of silicon, germanium, and gallium arsenide have been carried out using an advanced set-up providing intense subpicosecond pulses (35 fs FWHM, $$lambda $$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:mi>λ</mml:mi> </mml:math> = 400 nm) as a pump and broadband 340–780 nm ultrafast pulses as a white supercontinuum probe. Measurements have been performed for selected pump fluence conditions below the damage thresholds, that were carefully characterized. The obtained fluence damage thresholds are 30, 20.8, 9.6 mJ/ $$hbox {cm}^2$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msup> <mml:mtext>cm</mml:mtext> <mml:mn>2</mml:mn> </mml:msup> </mml:math> for Si, Ge and GaAs respectively. Ultrafast reflectivity patterns show clear differences in the Si, Ge, and GaAs trends both for the wavelength and time dependences. Important changes were observed near the wavelength regions corresponding to the $$E_1$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mi>E</mml:mi> <mml:mn>1</mml:mn> </mml:msub> </mml:math> , $$E_1+Delta $$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:mrow> <mml:msub> <mml:mi>E</mml:mi> <mml:mn>1</mml:mn> </mml:msub> <mml:mo>+</mml:mo> <mml:mi>Δ</mml:mi> </mml:mrow> </mml:math> singularities in the joint density of states, so related to the peculiar band structure of the three systems. For Ge, ultrafast reflectivity spectra were also collected at low temperature (down to 80 K) showing a shift of the characteristic doublet peak around 2.23 eV and a reduction of the recovery times." @default.
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- W3093217526 date "2020-10-15" @default.
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- W3093217526 title "Broadband optical ultrafast reflectivity of Si, Ge and GaAs" @default.
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- W3093217526 doi "https://doi.org/10.1038/s41598-020-74068-y" @default.
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