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• W3094090260 startingPage "4924" @default.
• W3094090260 abstract "The application of an aluminum (Al) capping layer on top of an In–Ga–Zn–O (IGZO) active layer is proposed to enhance the mobility of IGZO thin-film transistors (TFTs). The Al metal layer forms a very thin and dense oxide film on the surface that prevents further internal oxidation, and an additional AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><i>x</i></sub> interlayer between Al and IGZO is formed using oxygen in the IGZO back-channel region due to its strong oxidation power. The formation of an aluminum oxide interlayer induces an oxygen-deficient region in the active layer, inducing free carriers that enhance the field-effect mobility from 11.3 to 72.6 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs. The device reliability under positive and negative bias stress in the dark is relatively unaffected by the presence of the Al capping layer; however, the stability under negative bias illumination stress is accelerated, likely originating from the ionization of oxygen vacant sites." @default.
• W3094090260 created "2020-10-29" @default.
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• W3094090260 date "2020-11-01" @default.
• W3094090260 modified "2023-09-25" @default.
• W3094090260 title "Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer" @default.
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• W3094090260 doi "https://doi.org/10.1109/ted.2020.3022337" @default.
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