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- W3094932414 abstract "Abstract Nanocrystalline Ga‐doped molybdenum bismuth selenide thin films have been deposited onto amorphous and fluorine‐doped tin oxide (FTO) coated glass substrate using arrested precipitation technique (APT), which is based on self‐organized growth process. Deposited thin films of MoBi (2‐ x ) Ga x Se 5 are characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and X‐ray photoelectron spectroscopy (XPS). XRD analysis shows mixed phase type crystal structure of MoBi (2‐ x ) Ga x Se 5 thin films. SEM analysis shows that closely packed grains provide a pinhole‐free morphology. The average surface roughness of as deposited MoBi (2‐ x ) Ga x Se 5 ( x = 0.0, 0.04, and 0.10) thin films obtained from AFM images is 5.04 nm μm ‐2 . In TEM analysis, lattice plane (015), (103), and (103) are observed in SAED pattern, which confirms mixed phase type crystal structure of MoBi (2‐ x ) Ga x Se 5 thin films. The binding energy, elemental composition, and surface nature of MoBi (2‐ x ) Ga x Se 5 thin film is confirmed by using XPS. The photoelectrochemical (PEC) investigations are carried out using cell configuration p‐MoBi (2‐ x ) Ga x Se 5 (FTO)/0.5M (Na 2 S x ‐ NaOH‐S)/counter electrode. After Ga doping, MoBi 2 Se 5 thin film electrodes exhibit photoactivity in sulphide/polysulphide electrolyte toward positive polarity (p‐type behavior). On the addition of gallium, power conversion efficiency of Mo x Bi (2‐ x ) Ga x Se 5 thin films decreases from 0.456 to 0.171%." @default.
- W3094932414 created "2020-11-09" @default.
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- W3094932414 date "2020-10-01" @default.
- W3094932414 modified "2023-09-26" @default.
- W3094932414 title "Photoelectrochemical (PEC) Investigation of Ga‐Doped MoBi 2 Se 5 Thin Films Deposited by Arrested Precipitation Technique" @default.
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- W3094932414 doi "https://doi.org/10.1002/masy.201900210" @default.
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