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• W3096054278 startingPage "126502" @default.
• W3096054278 abstract "Abstract In this work, electron beam lithography proximity effect correction (PEC) was experimentally studied for patterning of Si photonic waveguides with a relatively thick resist mask. Beam’s energy density distribution (EDD) was experimentally extracted by the line exposure method; however, exposure lines in this work were developed after cleavage with a high-contrast process to reduce developer-related effects. The measured line spread function was fitted to a 4-Gaussian function to model mid-range energy densities accurately. The extracted EDD showed less proximity effects compared to conventional Monte-Carlo simulation performed by a commercial software. PEC processes with both techniques were experimentally compared for a Si photonic waveguide pattern with different side-cladding trench widths. Microscopic images confirmed that the presented calibration method could achieve better development conditions near the required clearance dosage. Single-mode propagation loss for a 500 × 220 nm Si wire waveguide was reduced from 3.2 to 2.4 dB cm −1 using the presented process." @default.
• W3096054278 created "2020-11-09" @default.
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• W3096054278 date "2020-11-20" @default.
• W3096054278 modified "2023-10-18" @default.
• W3096054278 title "Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction" @default.
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• W3096054278 doi "https://doi.org/10.35848/1347-4065/abc78d" @default.
• W3096054278 hasPublicationYear "2020" @default.
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