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- W3096150182 abstract "Physical parameters calibration (dielectric and alloy properties) of Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-X</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>X</sub> alloys is presented in order to simulate the Ultra Violet-Nanosecond Laser Annealing (UVNLA) of this material for Si/ Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-X</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>X</sub> based MOS devices. Optical and physical parameters are extracted and modeled from experimental characterizations for several Ge concentrations and then fitted to match experimental laser annealing results. A good prediction, in terms of melt depth and melting duration, is achieved for different Ge concentrations between 20 and 40%, usually encountered in Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-X</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>X</sub> CMOS integration process." @default.
- W3096150182 created "2020-11-09" @default.
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- W3096150182 date "2020-09-23" @default.
- W3096150182 modified "2023-10-18" @default.
- W3096150182 title "Undoped SiGe material calibration for numerical nanosecond laser annealing simulations" @default.
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- W3096150182 doi "https://doi.org/10.23919/sispad49475.2020.9241664" @default.
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